| PART |
Description |
Maker |
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| 3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK321 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK45 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi
|
| BF998R BF998 BF998/T1 |
TRANSISTOR MOSFET
Silicon N-channel dual-gate
|
Philips
|
| BF901R BF901 |
Silicon n-channel dual gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 3SK295ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 3SK319YB-TL-E 3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Renesas Electronics Corporation
|
| 3SK291 |
Field Effect Transistor Silicon N-Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications
|
TOSHIBA
|
| 3SK249 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications
|
TOSHIBA
|
| KK4002BD KK4002B KK4002BN |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
